N-Channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay SIR626DP-T1-RE3

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產品概覽和技術數據資料表

MOSFET Transistors, Vishay Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	60 V
Package Type	SO
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	104 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.25mm
Typical Gate Charge @ Vgs	68 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.26mm
Series	TrenchFET
Minimum Operating Temperature	-55 °C
Height	1.12mm
Forward Diode Voltage	1.1V