N-Channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay SIR690DP-T1-RE3

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產品概覽和技術數據資料表

MOSFET Transistors, Vishay Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	34.4 A
Maximum Drain Source Voltage	200 V
Package Type	SO
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	39 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	104 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	5.26mm
Typical Gate Charge @ Vgs	31.9 nC @ 10 V
Length	6.25mm
Forward Diode Voltage	1.1V
Height	1.12mm
Minimum Operating Temperature	-55 °C