STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS庫存編號:
- 792-5779
- 製造零件編號:
- STGFW30V60DF
- 製造商:
- STMicroelectronics
72 現貨庫存，可於3工作日發貨。
已增加
單價 个（每托盘 2 ）
HK$22.57
| 單位 | Per unit | Per Pack* |
| 2 - 6 | HK$22.57 | HK$45.14 |
| 8 - 14 | HK$22.005 | HK$44.01 |
| 16 + | HK$21.665 | HK$43.33 |
| * 參考價格 | ||
- RS庫存編號:
- 792-5779
- 製造零件編號:
- STGFW30V60DF
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 58 W |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.7 x 5.7 x 26.7mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |