N-Channel MOSFET, 3.2 A, 60 V, 3-Pin SOT-89 Infineon BSS606NH6327XTSA1
- RS庫存編號:
- 145-8766
- 製造零件編號:
- BSS606NH6327XTSA1
- 製造商:
- Infineon
當前暫無庫存，可於2024/5/3發貨，3 工作日送達。
已增加
單價 个（每带 1000 ）
HK$1.577
| 單位 | Per unit | Per Reel* |
| 1000 - 4000 | HK$1.577 | HK$1,577.00 |
| 5000 + | HK$1.419 | HK$1,419.00 |
| * 參考價格 | ||
- RS庫存編號:
- 145-8766
- 製造零件編號:
- BSS606NH6327XTSA1
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- MY
產品詳細資訊
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-89 |
| Series | OptiMOS 3 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 4.5mm |
| Width | 2.5mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
| Transistor Material | Si |
| Height | 1.5mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |