- RS庫存編號:
- 165-8287
- 製造零件編號:
- IRFR8314TRPBF
- 製造商:
- Infineon
當前暫無庫存,可於2025/4/30發貨,3 工作日送達。
已增加
單價 个(每带 2000 )
HK$5.408
單位 | Per unit | Per Reel* |
2000 - 8000 | HK$5.408 | HK$10,816.00 |
10000 + | HK$5.30 | HK$10,600.00 |
* 參考價格 |
- RS庫存編號:
- 165-8287
- 製造零件編號:
- IRFR8314TRPBF
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- MX
產品詳細資訊
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 179 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DPAK (TO-252) |
Series | HEXFET |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 36 nC @ 4.5 V |
Length | 6.73mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Width | 7.49mm |
Height | 2.39mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1V |