Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118

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產品概覽和技術數據資料表

MOSFET Transistors, NXP Semiconductors

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.4 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.8V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	6 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Width	4mm
Length	5mm
Maximum Operating Temperature	+150 °C
Height	1.45mm
Minimum Operating Temperature	-65 °C