Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions
RS庫存編號 184-868
製造零件編號2SC5198-O(Q)
BrandToshiba
HK$13.62
單位
NPN 10 A 140 V TO-3PN Through Hole 100 W - Single 140 V 5 V 30 MHz 3 1 19 x 15.9 x 4.8mm
RS庫存編號 125-0072
製造零件編號MJE15030G
Brandonsemi
HK$14.775
毎管:50 個
單位
NPN 8 A 150 V TO-220AB Through Hole 50 W - Single 150 V 5 V 30 MHz 3 1 9.28 x 10.28 x 4.82mm
RS庫存編號 544-9680
製造零件編號MJE15030G
Brandonsemi
HK$16.06
單位
NPN 8 A 150 V TO-220AB Through Hole 50 W - Single 150 V 5 V 30 MHz 3 1 9.28 x 10.28 x 4.82mm
RS庫存編號 805-1043
製造零件編號2N3904TAR
Brandonsemi
HK$0.949
/個 (每包:200個)
單位
NPN 200 mA 40 V TO-92 Through Hole 625 mW - Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm
RS庫存編號 805-1056
製造零件編號2N3904TFR
Brandonsemi
HK$0.869
/個 (每包:200個)
單位
NPN 200 mA 40 V TO-92 Through Hole 625 mW - Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm
RS庫存編號 843-1575
製造零件編號2N3904BU
Brandonsemi
HK$2.053
/個 (每包:50個)
單位
NPN 200 mA 40 V TO-92 Through Hole 625 mW - Single 60 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm
RS庫存編號 806-2750
製造零件編號KSC3503DSTU
Brandonsemi
HK$4.696
毎管:60 個
單位
NPN 100 mA 300 V TO-126 Through Hole 7 W - Single 300 V 5 V 1 MHz 3 1 8 x 3.25 x 11mm
RS庫存編號 168-6075
製造零件編號BD139
HK$6.146
毎管:50 個
單位
NPN 3 A 80 V SOT-32 Through Hole 1.25 W - Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm
RS庫存編號 545-0343
製造零件編號MMBT3904LT1G
Brandonsemi
HK$1.354
/個 (每包:50個)
單位
NPN 200 mA 40 V SOT-23 Surface Mount 300 mW - Single 60 V 6 V 300 MHz 3 1 0.94 x 2.9 x 1.3mm
RS庫存編號 761-3511
製造零件編號BD13916STU
Brandonsemi
HK$5.129
/個 (每包:10個)
單位
NPN 1.5 A 80 V TO-126 Through Hole 12.5 W - Single 80 V 5 V - 3 1 8 x 3.25 x 11mm
RS庫存編號 170-3540
製造零件編號MMBT3904LT3G
Brandonsemi
HK$0.254
個 (在毎卷:10000)
單位
NPN 900 mA 40 V SOT-23 Surface Mount 300 mW - Single 60 V dc 6 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm
RS庫存編號 103-2948
製造零件編號MMBT3904LT1G
Brandonsemi
HK$0.288
個 (在毎卷:3000)
單位
NPN 200 mA 40 V SOT-23 Surface Mount 300 mW - Single 60 V 6 V 300 MHz 3 1 0.94 x 2.9 x 1.3mm
RS庫存編號 124-1317
製造零件編號2N3904TA
Brandonsemi
HK$0.487
個 (在毎卷:2000)
單位
NPN 200 mA 40 V TO-92 Through Hole 625 mW - Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm
RS庫存編號 793-0753
製造零件編號MMBT3904LT3G
Brandonsemi
HK$0.696
/個 (每包:200個)
單位
NPN 900 mA 40 V SOT-23 Surface Mount 300 mW - Single 60 V dc 6 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm
RS庫存編號 145-4345
製造零件編號BD13916STU
Brandonsemi
HK$4.994
毎管:60 個
單位
NPN 1.5 A 80 V TO-126 Through Hole 12.5 W - Single 80 V 5 V - 3 1 8 x 3.25 x 11mm
RS庫存編號 314-1823
製造零件編號BD139
HK$6.68
單位
NPN 3 A 80 V SOT-32 Through Hole 1.25 W - Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm
RS庫存編號 842-8015
製造零件編號2N3904BU
Brandonsemi
HK$0.664
個 (以毎袋:1000)
單位
NPN 200 mA 40 V TO-92 Through Hole 625 mW - Single 60 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm
RS庫存編號 796-9684
製造零件編號BC338-25 A1
HK$1.11
/個 (每包:250個)
單位
NPN 800 mA 25 V TO-92 Through Hole 625 mW - Single 30 V 5 V - 3 1 5.1 x 4.1 x 4.7mm
RS庫存編號 146-2331
製造零件編號BC338-25 A1
HK$0.459
Each (On a Tape of 4000)
單位
NPN 800 mA 25 V TO-92 Through Hole 625 mW - Single 30 V 5 V - 3 1 5.1 x 4.1 x 4.7mm
RS庫存編號 169-8620
製造零件編號BC557BTF
Brandonsemi
HK$0.695
個 (在毎卷:2000)
單位
PNP 100 mA 45 V TO-92 Through Hole 500 mW - Single -50 V -5 V 10 MHz 3 1 5.2 x 4.19 x 5.33mm