JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS庫存編號 163-2020
製造零件編號2SK3557-6-TB-E
HK$1.098
個 (在毎卷:3000)
單位
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 792-5164
製造零件編號2SK3557-6-TB-E
HK$2.78
/個 (每包:25個)
單位
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 806-1757
製造零件編號J112
HK$2.577
/個 (每包:50個)
單位
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS庫存編號 124-1385
製造零件編號J112
HK$0.914
個 (以毎袋:1000)
單位
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS庫存編號 792-5173
製造零件編號2SK932-23-TB-E
HK$3.077
Each (On a Tape of 25)
單位
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 166-2021
製造零件編號J109
HK$1.303
個 (以毎袋:1000)
單位
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS庫存編號 145-4162
製造零件編號2SK3666-3-TB-E
HK$0.662
個 (在毎卷:3000)
單位
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS庫存編號 163-2024
製造零件編號2SK932-23-TB-E
HK$1.10
個 (在毎卷:3000)
單位
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 163-0037
製造零件編號MMBFJ175LT1G
HK$1.04
個 (在毎卷:3000)
單位
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS庫存編號 806-1750
製造零件編號J109
HK$2.764
/個 (每包:25個)
單位
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS庫存編號 792-5161
製造零件編號2SK3666-3-TB-E
HK$2.46
/個 (每包:50個)
單位
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS庫存編號 864-7840
製造零件編號MMBFJ175LT1G
HK$2.901
/個 (每包:25個)
單位
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS庫存編號 792-5170
製造零件編號2SK932-22-TB-E
HK$3.812
/個 (每包:25個)
單位
N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 166-3080
製造零件編號MMBF4092
HK$1.127
個 (在毎卷:3000)
單位
N Min. 15mA 0.2 V -40 V 40V Single Single 50 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 145-4270
製造零件編號MMBF4393LT1G
HK$0.763
個 (在毎卷:3000)
單位
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS庫存編號 163-2019
製造零件編號2SK2394-7-TB-E
HK$1.529
個 (在毎卷:3000)
單位
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 761-3684
製造零件編號MMBFJ112
HK$2.538
/個 (每包:25個)
單位
N Min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS庫存編號 166-3093
製造零件編號MMBFJ111
HK$0.813
個 (在毎卷:3000)
單位
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS庫存編號 163-0964
製造零件編號MMBFJ309LT1G
HK$1.04
個 (在毎卷:3000)
單位
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 166-3082
製造零件編號MMBF4119
HK$0.83
個 (在毎卷:3000)
單位
N 0.2 → 0.6mA 10 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm