Nexperia PBSS4160U,115 NPN Transistor, 1 A, 60 V, 3-Pin UMT

  • RS庫存編號 485-420
  • 製造零件編號 PBSS4160U,115
  • 製造商 Nexperia
COO (Country of Origin): CN

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type UMT
Mounting Type Surface Mount
Maximum Power Dissipation 415 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 220 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Base Emitter Saturation Voltage 1.1 V
Minimum Operating Temperature -65 °C
Width 1.35mm
Maximum Collector Emitter Saturation Voltage 0.28 V
Dimensions 1 x 2.2 x 1.35mm
Length 2.2mm
Height 1mm
Maximum Operating Temperature +150 °C