Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

  • RS庫存編號 165-5849
  • 製造零件編號 BFP840ESDH6327XTSA1
  • 製造商 Infineon
COO (Country of Origin): CN

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2.25 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.9 V
Maximum Operating Frequency 80 GHz
Pin Count 4
Number of Elements per Chip 1
Transistor Material SiGe
Dimensions 2 x 1.25 x 0.8mm
Width 1.25mm
Height 0.8mm
Length 2mm
Maximum Operating Temperature +150 °C
當前暫無庫存,可於2019/12/10發貨,3 工作日送達。
單價 個 (在毎卷:3000)
HK$ 1.784
Per unit
Per Reel*
3000 +
* 參考價格