Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

  • RS庫存編號 826-8992
  • 製造零件編號 BFP840ESDH6327XTSA1
  • 製造商 Infineon
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SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

規格
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2.25 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.9 V
Maximum Operating Frequency 80 GHz
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Length 2mm
Width 1.25mm
Dimensions 2 x 1.25 x 0.8mm
Height 0.8mm
150 現貨庫存,可於3工作日發貨。
單價 /個 (每包:50個)
HK$ 2.705
(不含稅)
單位
Per unit
Per Pack*
50 - 950
HK$2.705
HK$135.25
1000 - 1950
HK$2.072
HK$103.60
2000 - 2950
HK$2.03
HK$101.50
3000 - 5950
HK$1.768
HK$88.40
6000 +
HK$1.735
HK$86.75
* 參考價格
包裝方式: