- RS庫存編號:
- 463-000
- 製造零件編號:
- MJ11016G
- 製造商:
- onsemi
- RS庫存編號:
- 463-000
- 製造零件編號:
- MJ11016G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 120 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-204 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain | 200 |
Maximum Base Emitter Saturation Voltage | 5 V |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | 4 V |
Dimensions | 39.37 x 26.67 x 8.51mm |
Height | 8.51mm |
Width | 26.67mm |
Length | 39.37mm |
Maximum Operating Temperature | +200 °C |
Minimum Operating Temperature | -55 °C |