ON Semi MJ11015G PNP Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

COO (Country of Origin): CZ

PNP Darlington Transistors, ON Semiconductor


Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Attribute Value
Transistor Type PNP
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 120 V
Maximum Emitter Base Voltage 5 V
Package Type TO-204
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain 200
Maximum Base Emitter Saturation Voltage 5 V
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 4 V
Minimum Operating Temperature -55 °C
Dimensions 39.37 x 26.67 x 8.51mm
Length 39.37mm
Width 26.67mm
Height 8.51mm
Maximum Operating Temperature +200 °C
300 現貨庫存,可於3工作日發貨。
單價 Each (In a Tray of 100)
原價 HK$46.711
HK$ 43.083
Per unit
Per Tray*
100 +
* 參考價格