onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204
- RS庫存編號:
- 688-1502
- 製造零件編號:
- MJ11015G
- 製造商:
- onsemi
190 現貨庫存，可於3工作日發貨。
已增加
單價 个（每托盘 2 ）
HK$64.58
| 單位 | Per unit | Per Pack* |
| 2 - 24 | HK$64.58 | HK$129.16 |
| 26 - 128 | HK$62.965 | HK$125.93 |
| 130 + | HK$51.82 | HK$103.64 |
| * 參考價格 | ||
- RS庫存編號:
- 688-1502
- 製造零件編號:
- MJ11015G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 120 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Dimensions | 39.37 x 26.67 x 8.51mm |
| Width | 26.67mm |
| Minimum Operating Temperature | -55 °C |
| Length | 39.37mm |
| Maximum Operating Temperature | +200 °C |
| Height | 8.51mm |