- RS庫存編號:
- 186-7918
- 製造零件編號:
- BDX34BG
- 製造商:
- onsemi
此產品已停售
- RS庫存編號:
- 186-7918
- 製造零件編號:
- BDX34BG
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available
Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available
規格
Attribute | Value |
---|---|
Transistor Type | PNP |
Maximum Collector Emitter Voltage | 80 V dc |
Package Type | TO-220 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 70 W |
Transistor Configuration | Single |
Maximum Emitter Base Voltage | 5 V dc |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Dimensions | 10.53 x 4.83 x 9.28mm |
Maximum Operating Temperature | +150 °C |