ON Semiconductor, BDX53BG

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COO (Country of Origin): CN
產品詳細資訊

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available

規格
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 8 A
Maximum Collector Emitter Voltage 80 V dc
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Minimum DC Current Gain 750
Transistor Configuration Single
Maximum Power Dissipation 65 W
Maximum Collector Emitter Saturation Voltage 4 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Minimum Operating Temperature -65 °C
Height 9.28mm
Maximum Operating Temperature +150 °C
Length 10.53mm
Dimensions 10.53 x 4.83 x 9.28mm
Maximum Base Emitter Saturation Voltage 2.5 V dc
Width 4.83mm
380 現貨庫存,可於3工作日發貨。
單價 /個 (每包:10個)
HK$ 6.759
(不含稅)
單位
Per unit
Per Pack*
10 - 10
HK$6.759
HK$67.59
20 +
HK$6.626
HK$66.26
* 參考價格
包裝方式: