onsemi BDX53BG NPN Digital Transistor, 80 V dc, 3-Pin TO-220
- RS庫存編號:
- 186-7938
- 製造零件編號:
- BDX53BG
- 製造商:
- onsemi
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已增加
單價 个（每托盘 10 ）
HK$6.232
| 單位 | Per unit | Per Pack* |
| 10 - 10 | HK$6.232 | HK$62.32 |
| 20 - 20 | HK$6.077 | HK$60.77 |
| 30 + | HK$5.983 | HK$59.83 |
| * 參考價格 | ||
- RS庫存編號:
- 186-7938
- 製造零件編號:
- BDX53BG
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Collector Emitter Voltage | 80 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 65 W |
| Transistor Configuration | Single |
| Maximum Emitter Base Voltage | 5 V dc |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 10.53 x 4.83 x 9.28mm |