- RS庫存編號:
- 186-8055
- 製造零件編號:
- FJB102TM
- 製造商:
- onsemi
- RS庫存編號:
- 186-8055
- 製造零件編號:
- FJB102TM
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
FJB102: 100V High Voltage Power Darlington Transistor
High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.)
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Applications
This product is general usage and suitable for many different applications.
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Applications
This product is general usage and suitable for many different applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Collector Emitter Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 80 W |
Minimum DC Current Gain | 200 |
Transistor Configuration | Dual |
Maximum Emitter Base Voltage | 5 V |
Pin Count | 2 + Tab |
Number of Elements per Chip | 2 |
Dimensions | 10.67 x 9.65 x 4.58mm |
Maximum Operating Temperature | +150 °C |