ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220

產品概覽和技術數據資料表
法例與合規
相容
產品詳細資訊

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

規格
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2 A
Maximum Collector Source Voltage 2.21V
Maximum Power Dissipation 100 W
Minimum DC Current Gain 20
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1A
Category Silicon Transistor
Dimensions 9.9 x 4.5 x 15.95mm
Height 15.95mm
Minimum Operating Temperature -55 °C
Length 9.9mm
Maximum Operating Temperature +125 °C
Width 4.5mm
695 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 13.45
(不含稅)
單位
Per unit
Per Pack*
5 - 45
HK$13.45
HK$67.25
50 - 245
HK$10.864
HK$54.32
250 - 495
HK$10.104
HK$50.52
500 - 995
HK$9.234
HK$46.17
1000 +
HK$8.148
HK$40.74
* 參考價格
包裝方式: