Cypress Semiconductor FM24C04B-G Serial-2 Wire, Serial-I2C FRAM Memory, 4kbit, 4.5 → 5.5 V 8-Pin SOIC

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F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

規格
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type Serial-2 Wire, Serial-I2C
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Maximum Operating Supply Voltage 5.5 V
Width 3.98mm
Height 1.48mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 4.5 V
Number of Words 512
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
350 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 13.658
(不含稅)
單位
Per unit
Per Pack*
5 - 5
HK$13.658
HK$68.29
10 - 20
HK$12.858
HK$64.29
25 - 95
HK$12.676
HK$63.38
100 - 495
HK$11.652
HK$58.26
500 +
HK$11.38
HK$56.90
* 參考價格
包裝方式: