Cypress Semiconductor FM28V100-TG Parallel FRAM Memory, 1Mbit, 60ns, 2 → 3.6 V 32-Pin TSOP


F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Interface Type Parallel
Maximum Random Access Time 60ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 32
Dimensions 11.9 x 8.1 x 1.05mm
Length 11.9mm
Maximum Operating Supply Voltage 3.6 V
Width 8.1mm
Height 1.05mm
Maximum Operating Temperature +85 °C
Number of Words 128K
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2 V
Minimum Operating Temperature -40 °C
194 現貨庫存,可於3工作日發貨。
單價 Each (Supplied in a Tray)
HK$ 200.56
Per unit
10 - 49
50 - 99
100 - 499
500 +