Cypress Semiconductor FM22L16-55-TG Parallel FRAM Memory, 4Mbit, 55ns 44-Pin TSOP


F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Attribute Value
Memory Size 4Mbit
Organisation 256K x 16 bit
Interface Type Parallel
Maximum Random Access Time 55ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Length 18.51mm
Width 10.26mm
Maximum Operating Supply Voltage 3.6 V
Height 1.04mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Number of Words 256K
Number of Bits per Word 16bit
Minimum Operating Supply Voltage 2.7 V
當前暫無庫存,可於2021/5/7發貨,3 工作日送達。
單價 Each (In a Tray of 135)
原價 HK$254.757
HK$ 238.788
Per unit
Per Tray*
135 +
* 參考價格