- RS庫存編號:
- 194-8980
- 製造零件編號:
- CY15E016Q-SXE
- 製造商:
- Cypress Semiconductor
此產品已停售
- RS庫存編號:
- 194-8980
- 製造零件編號:
- CY15E016Q-SXE
- 製造商:
- Cypress Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15E016Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The CY15E016Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15E016Q ideal for nonvolatile memory applications requiring frequent or rapid writes.
規格
Attribute | Value |
---|---|
Memory Size | 16kbit |
Organisation | 2K x 8 bit |
Interface Type | Serial-SPI |
Data Bus Width | 8bit |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.47mm |
Maximum Operating Supply Voltage | 5.5 V |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |
Automotive Standard | AEC-Q100 |
Number of Bits per Word | 8bit |
Number of Words | 2K |
Minimum Operating Supply Voltage | 4.5 V |