- RS庫存編號:
- 194-580
- 製造零件編號:
- MUBW50-06A7
- 製造商:
- IXYS
此產品已停售
- RS庫存編號:
- 194-580
- 製造零件編號:
- MUBW50-06A7
- 製造商:
- IXYS
法例與合規
產品詳細資訊
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Configuration | 3 Phase Bridge |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 23 |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |