- RS庫存編號:
- 110-9132
- 製造零件編號:
- 7MBR25VA-120-50
- 製造商:
- Fuji Electric
此產品已停售
- RS庫存編號:
- 110-9132
- 製造零件編號:
- 7MBR25VA-120-50
- 製造商:
- Fuji Electric
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法例與合規
產品詳細資訊
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 25 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 170 W |
Package Type | M711 |
Configuration | 3 Phase Bridge |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 24 |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Maximum Operating Temperature | +150 °C |