Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS庫存編號:
- 110-9135
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價 个
HK$1,464.12
| 單位 | Per unit |
| 1 - 1 | HK$1,464.12 |
| 2 - 4 | HK$1,427.53 |
| 5 - 9 | HK$1,391.84 |
| 10 - 19 | HK$1,357.05 |
| 20 + | HK$1,323.11 |
- RS庫存編號:
- 110-9135
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
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產品詳細資訊
IGBT Modules 7-Pack, Fuji Electric
V-Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 280 W |
| Configuration | 3 Phase Bridge |
| Package Type | M712 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |