- RS庫存編號:
- 124-0710
- 製造零件編號:
- MIXA225PF1200TSF
- 製造商:
- IXYS
- RS庫存編號:
- 124-0710
- 製造零件編號:
- MIXA225PF1200TSF
- 製造商:
- IXYS
法例與合規
產品詳細資訊
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 360 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 1100 W |
Configuration | Dual |
Package Type | SimBus F |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 152 x 62 x 17mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |