- RS庫存編號:
- 166-0902
- 製造零件編號:
- FF400R12KE3HOSA1
- 製造商:
- Infineon
當前暫無庫存,可於2024/4/24發貨,3 工作日送達。
已增加
單價 个(每套 10)
HK$1,616.662
單位 | Per unit | Per Tray* |
10 - 10 | HK$1,616.662 | HK$16,166.62 |
20 - 30 | HK$1,584.329 | HK$15,843.29 |
40 + | HK$1,552.642 | HK$15,526.42 |
* 參考價格 |
- RS庫存編號:
- 166-0902
- 製造零件編號:
- FF400R12KE3HOSA1
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- HU
產品詳細資訊
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 580 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 2 kW |
Package Type | AG-62MM-1 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | Series |
Dimensions | 106.4 x 61.4 x 30.9mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +125 °C |