onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
- RS庫存編號:
- 195-8771
- 製造零件編號:
- NXH100B120H3Q0STG
- 製造商:
- onsemi
- RS庫存編號:
- 195-8771
- 製造零件編號:
- NXH100B120H3Q0STG
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 186 W |
| Package Type | Q0BOOST |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 22 |
| Transistor Configuration | Dual |
| Dimensions | 66.2 x 32.8 x 11.9mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |