Semikron SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount
- RS庫存編號:
- 468-2454
- 製造零件編號:
- SKM200GB125D
- 製造商:
- Semikron
7 現貨庫存，可於3工作日發貨。
已增加
單價 个
HK$2,429.96
| 單位 | Per unit |
| 1 - 1 | HK$2,429.96 |
| 2 - 4 | HK$2,357.07 |
| 5 - 9 | HK$2,309.93 |
| 10 - 19 | HK$2,263.73 |
| 20 + | HK$2,218.46 |
- RS庫存編號:
- 468-2454
- 製造零件編號:
- SKM200GB125D
- 製造商:
- Semikron
法例與合規
產品詳細資訊
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | SEMITRANS3 |
| Configuration | Dual Half Bridge |
| Mounting Type | Panel Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Series |
| Dimensions | 106.4 x 61.4 x 30.5mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |