Semikron SKM200GB126D, SEMITRANS3 Dual Half Bridge IGBT Module, 260 A max, 1200 V, Panel Mount

  • RS庫存編號 468-2460
  • 製造零件編號 SKM200GB126D
  • 製造商 Semikron
COO (Country of Origin): DE

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 260 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 7
Dimensions 106.4 x 61.4 x 30mm
Height 30mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 61.4mm
36 現貨庫存,可於3工作日發貨。
單價 個
HK$ 1,490.79
Per unit
1 - 1
2 - 4
5 - 9
10 - 19
20 +