Fuji Electric 7MBR75U4B-120-50, M712 3 Phase Bridge IGBT Module, 75 A max, 1200 V, PCB Mount

  • RS庫存編號 716-5671
  • 製造零件編號 7MBR75U4B-120-50
  • 製造商 Fuji Electric
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IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase Bridge
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Package Type M712
Pin Count 24
Maximum Power Dissipation 275 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +150 °C
Width 62mm
3 現貨庫存,可於3工作日發貨。
單價 個
HK$ 1,373.60
(不含稅)
單位
Per unit
1 - 1
HK$1,373.60
2 - 4
HK$1,290.39
5 - 9
HK$1,232.06
10 - 19
HK$1,208.33
20 +
HK$1,196.49