- RS庫存編號:
- 747-1119
- 製造零件編號:
- 1MBi200U4H-120L-50
- 製造商:
- Fuji Electric
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- RS庫存編號:
- 747-1119
- 製造零件編號:
- 1MBi200U4H-120L-50
- 製造商:
- Fuji Electric
法例與合規
- COO (Country of Origin):
- MY
產品詳細資訊
IGBT Modules 1-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1.04 kW |
Package Type | M259 |
Configuration | Single |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Single |
Dimensions | 108 x 62 x 30mm |
Maximum Operating Temperature | +150 °C |