IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268

  • RS庫存編號 192-635
  • 製造零件編號 IXGT30N120B3D1
  • 製造商 IXYS
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IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Package Type TO-268
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Length 16.05mm
Width 14mm
Height 5.1mm
Dimensions 16.05 x 14 x 5.1mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
當前暫無庫存,可於2019/12/20發貨,3 工作日送達。
單價 個
HK$ 58.29
(不含稅)
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HK$56.06
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HK$50.94