- RS庫存編號:
- 192-635
- 製造零件編號:
- IXGT30N120B3D1
- 製造商:
- IXYS
當前暫無庫存,可於2024/10/30發貨,3 工作日送達。
已增加
單價 个
HK$86.41
單位 | Per unit |
1 - 7 | HK$86.41 |
8 - 14 | HK$84.25 |
15 + | HK$82.96 |
- RS庫存編號:
- 192-635
- 製造零件編號:
- IXGT30N120B3D1
- 製造商:
- IXYS
法例與合規
產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Package Type | TO-268 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.05 x 14 x 5.1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |