onsemi NGTG30N60FWG IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 121-6459
- 製造零件編號:
- NGTG30N60FWG
- 製造商:
- ON Semiconductor
此產品已停售
- RS庫存編號:
- 121-6459
- 製造零件編號:
- NGTG30N60FWG
- 製造商:
- ON Semiconductor
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 167 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.25 x 5.3 x 21.4mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |