- RS庫存編號:
- 124-1305
- 製造零件編號:
- HGTG40N60A4
- 製造商:
- Fairchild Semiconductor
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查看所有IGBTs
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單價 毎管:30 個
HK$85.271
單位 | Per unit | Per Tube* |
30 - 30 | HK$85.271 | HK$2,558.13 |
60 - 120 | HK$81.396 | HK$2,441.88 |
150 - 270 | HK$78.006 | HK$2,340.18 |
300 - 570 | HK$75.006 | HK$2,250.18 |
600 + | HK$72.326 | HK$2,169.78 |
* 參考價格 |
- RS庫存編號:
- 124-1305
- 製造零件編號:
- HGTG40N60A4
- 製造商:
- Fairchild Semiconductor
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.87 x 4.82 x 20.82mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |