onsemi FGH40N60UFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 124-1335
- 製造零件編號:
- FGH40N60UFDTU
- 製造商:
- onsemi
當前暫無庫存，可於2024/6/12發貨，3 工作日送達。
已增加
單價 毎管：30 个
HK$21.242
| 單位 | Per unit | Per Tube* |
| 30 - 30 | HK$21.242 | HK$637.26 |
| 60 - 90 | HK$20.817 | HK$624.51 |
| 120 + | HK$20.401 | HK$612.03 |
| * 參考價格 | ||
- RS庫存編號:
- 124-1335
- 製造零件編號:
- FGH40N60UFDTU
- 製造商:
- onsemi
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法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 290 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |