Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole
- RS庫存編號:
- 124-3701
- 製造零件編號:
- RJH60F3DPQ-A0#T0
- 製造商:
- Renesas Electronics
此產品已停售
- RS庫存編號:
- 124-3701
- 製造零件編號:
- RJH60F3DPQ-A0#T0
- 製造商:
- Renesas Electronics
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 178.5 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Maximum Operating Temperature | +150 °C |
| Gate Capacitance | 1260pF |