ON Semiconductor NGTB50N60FLWG IGBT, 100 A 600 V, 3-Pin TO-247

COO (Country of Origin): CN

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 223 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.08mm
Dimensions 16.26 x 5.3 x 21.08mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
30 現貨庫存,可於3工作日發貨。
單價 毎管:30 個
HK$ 37.549
Per unit
Per Tube*
30 +
* 參考價格