ON Semiconductor FGA30S120P IGBT, 60 A 1300 V, 3-Pin TO-3PN

COO (Country of Origin): KR

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1300 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 348 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 20.1mm
Dimensions 15.8 x 5 x 20.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
60 現貨庫存,可於3工作日發貨。
單價 毎管:30 個
HK$ 26.642
Per unit
Per Tube*
30 +
* 參考價格