IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247

  • RS庫存編號 146-1728
  • 製造零件編號 IXGH72N60B3
  • 製造商 IXYS
COO (Country of Origin): US

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 540 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 40kHz
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
180 現貨庫存,可於3工作日發貨。
單價 毎管:60 個
HK$ 45.707
Per unit
Per Tube*
60 +
* 參考價格