ROHM RGTH50TK65GC11 IGBT, 26 A 650 V, 3-Pin TO-3PFM, Through Hole

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產品概覽和技術數據資料表

Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant

Attribute	Value
Maximum Continuous Collector Current	26 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±30V
Number of Transistors	1
Maximum Power Dissipation	59 W
Package Type	TO-3PFM
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16 x 5 x 21mm
Gate Capacitance	57pF
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C