Infineon IKQ50N120CH3XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247

  • RS庫存編號 162-3328
  • 製造零件編號 IKQ50N120CH3XKSA1
  • 製造商 Infineon

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device

Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Number of Transistors 1
Maximum Power Dissipation 652 W
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 3
Switching Speed 60kHz
Transistor Configuration Single
Length 15.9mm
Width 5.1mm
Height 21.1mm
Dimensions 15.9 x 5.1 x 21.1mm
Energy Rating 4.9
Gate Capacitance 3269pF
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
346 現貨庫存,可於3工作日發貨。
單價 個
HK$ 102.47
Per unit
1 - 9
10 - 19
20 +