ON Semiconductor NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247

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COO (Country of Origin): CN
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IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 384 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 16.25mm
Width 5.3mm
Height 21.4mm
Dimensions 16.25 x 5.3 x 21.4mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
暫時缺貨-將在補貨後發貨。
單價 毎管:30 個
HK$ 27.914
(不含稅)
單位
Per unit
Per Tube*
30 +
HK$27.914
HK$837.42
* 參考價格