- RS庫存編號:
- 164-6957
- 製造零件編號:
- STGB25N40LZAG
- 製造商:
- STMicroelectronics
此產品已停售
- RS庫存編號:
- 164-6957
- 製造零件編號:
- STGB25N40LZAG
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 320 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 25 A |
Maximum Collector Emitter Voltage | 435 V |
Maximum Gate Emitter Voltage | 16V |
Number of Transistors | 1 |
Maximum Power Dissipation | 150 W |
Package Type | D2PAK |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 9.35mm |
Automotive Standard | AEC-Q101 |
Energy Rating | 320mJ |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 1011pF |
Minimum Operating Temperature | -55 °C |