STMicroelectronics STGB25N40LZAG IGBT, 25 A 435 V, 3-Pin D2PAK


This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required

SCIS energy of 320 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor

Attribute Value
Maximum Continuous Collector Current 25 A
Maximum Collector Emitter Voltage 435 V
Maximum Gate Emitter Voltage 16V
Maximum Power Dissipation 150 W
Number of Transistors 1
Package Type D2PAK
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 9.35mm
Dimensions 10.4 x 4.6 x 9.35mm
Minimum Operating Temperature -55 °C
Energy Rating 320
Maximum Operating Temperature +175 °C
Automotive Standard AEC-Q101
Gate Capacitance 1011pF
當前暫無庫存,可於2020/5/7發貨,3 工作日送達。
單價 個 (在毎卷:1000)
HK$ 8.555
Per unit
Per Reel*
1000 +
* 參考價格