Infineon IRG4IBC20FDPBF IGBT, 14.3 A 600 V, 3-Pin TO-220FP

  • RS庫存編號 165-5425
  • 製造零件編號 IRG4IBC20FDPBF
  • 製造商 Infineon
COO (Country of Origin): MX

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Attribute Value
Maximum Continuous Collector Current 14.3 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 34 W
Package Type TO-220FP
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1 → 8kHz
Transistor Configuration Single
Length 10.75mm
Width 4.83mm
Height 16.13mm
Dimensions 10.75 x 4.83 x 16.13mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
當前暫無庫存,可於2020/6/2發貨,3 工作日送達。
單價 毎管:50 個
HK$ 13.14
Per unit
Per Tube*
50 +
* 參考價格