- RS庫存編號:
- 166-2084
- 製造零件編號:
- ISL9V3040S3ST
- 製造商:
- Fairchild Semiconductor
當前暫無庫存,可於2025/1/10發貨,3 工作日送達。
已增加
單價 个(每带 800 )
HK$15.596
單位 | Per unit | Per Reel* |
800 - 800 | HK$15.596 | HK$12,476.80 |
1600 - 2400 | HK$15.284 | HK$12,227.20 |
3200 + | HK$14.979 | HK$11,983.20 |
* 參考價格 |
- RS庫存編號:
- 166-2084
- 製造零件編號:
- ISL9V3040S3ST
- 製造商:
- Fairchild Semiconductor
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 21 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 150 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 9.65 x 4.83mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |