IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 168-4435
- 製造零件編號:
- IXGH40N120B2D1
- 製造商:
- IXYS
本地庫存暫不足，貨期請向RS查詢
已增加
單價 毎管：30 个
HK$131.271
| 單位 | Per unit | Per Tube* |
| 30 - 120 | HK$131.271 | HK$3,938.13 |
| 150 + | HK$118.144 | HK$3,544.32 |
| * 參考價格 | ||
- RS庫存編號:
- 168-4435
- 製造零件編號:
- IXGH40N120B2D1
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |