STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 168-7003
- 製造零件編號:
- STGW30V60F
- 製造商:
- STMicroelectronics
540 現貨庫存，可於3工作日發貨。
已增加
單價 毎管：30 个
HK$27.18
| 單位 | Per unit | Per Tube* |
| 30 - 30 | HK$27.18 | HK$815.40 |
| 60 - 270 | HK$26.589 | HK$797.67 |
| 300 + | HK$23.93 | HK$717.90 |
| * 參考價格 | ||
- RS庫存編號:
- 168-7003
- 製造零件編號:
- STGW30V60F
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |