STMicroelectronics STGP30V60F IGBT, 30 A 600 V, 3-Pin TO-220

COO (Country of Origin): CN

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 260 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 15.75mm
Dimensions 10.4 x 4.6 x 15.75mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
7450 現貨庫存,可於3工作日發貨。
單價 毎管:50 個
HK$ 19.12
Per unit
Per Tube*
50 +
* 參考價格