- RS庫存編號:
- 168-7093
- 製造零件編號:
- STGW40H60DLFB
- 製造商:
- STMicroelectronics
當前暫無庫存,可於2025/4/29發貨,3 工作日送達。
已增加
單價 毎管:30 个
HK$31.527
單位 | Per unit | Per Tube* |
30 - 30 | HK$31.527 | HK$945.81 |
60 - 270 | HK$30.841 | HK$925.23 |
300 + | HK$27.757 | HK$832.71 |
* 參考價格 |
- RS庫存編號:
- 168-7093
- 製造零件編號:
- STGW40H60DLFB
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 283 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |